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| MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-H * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC chopper, DC motor controllers, Inverters OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (E2Y) 94 (7) 20 10.5 E1 (7) 20 27 6.5 D2 A1 D1 C1 80 34 13 10.5 E1 B1 12 (E3Y) D2 D1 C1 E1 B1 E1 M5 Tab#110, t=0.5 6.5 31 LABEL (8) 22.5 K1 E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) (Transistor part including D1, Tj=25C) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 30 30 250 1.8 300 Unit V V V V A A W A A ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing (Diode part (D2), Tj=25C) Conditions Ratings 600 720 480 DC circuit, resistive, inductive load Peak value of one cycle of 60Hz (half wave) Value for one cycle of surge current 30 600 1.5 x 103 Unit V V V A A A2s ABSOLUTE MAXIMUM RATINGS Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage (Common) Conditions Ratings -40~150 -40~125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Transistor part including D1, Tj=25C) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=0.4A -IC=30A (diode forward voltage) IC=30A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=30A, IB1=-IB2=0.6A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.85 -- 1.5 12 3.0 0.5 2.0 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance (Diode part (D2), Tj=25C) Test conditions VR=VRRM, Tj=150C IF=30A IF=30A, di/dt=-60A/s, VR=600V, Tj=150C Junction to case Conductive grease applied (case to fin) Limits Min. -- -- -- -- -- -- Typ. -- -- -- -- -- -- Max. 5.0 1.5 0.9 15 1.3 0.15 Unit mA V s C C/ W C/ W PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25C 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) VCE=5.0V 80 IB=2.0A 60 IB=1.0A IB=0.5A 40 IB=0.3A 20 IB=0.1A DC CURRENT GAIN hFE VCE=2.0V 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 Tj=25C VCE=2.0V SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE(sat) 10 -1 10 0 IB=0.4A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) ton, ts, tf (s) Tj=25C Tj=125C 4 10 1 7 5 4 3 2 10 0 7 5 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ts 3 SWITCHING TIME ton tf 2 IC=30A 1 IC=10A 0 10 -2 2 3 4 5 7 10 -1 IC=20A 2 3 4 5 7 10 0 10 -1 10 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 VCC=300V IB1=-IB2=0.6A 2 3 4 5 7 10 2 IC (A) BASE CURRENT IB (A) COLLECTOR CURRENT SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 ts, tf (s) 10 1 7 5 4 3 2 10 0 7 5 4 3 10 -1 VCC=300V IB1=0.6A IC=30A Tj=25C Tj=125C REVERSE BIAS SAFE OPERATING AREA 70 Tj=125C COLLECTOR CURRENT IC (A) 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE (V) IB2=-1A -3A -5A ts SWITCHING TIME tf 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 100 90 DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) SECOND BREAKDOWN AREA 10 0 s 50 D C 0 s 10 0 7 5 3 2 TC=25C 10 -1 NON-REPETITIVE 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) 1m s COLLECTOR DISSIPATION 0 20 40 60 80 100 120 140 160 TC (C) CASE TEMPERATURE Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 0.5 0.4 Zth (j-c) (C/W) 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) PERFORMANCE CURVES (Diode part (D1)) FORWARD CHARACTERISTICS (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6 2.0 2.4 Tj=25C Tj=125C MAXIMUM SURGE CURRENT IFSM (A) SURGE FORWARD CURRENT 500 FORWARD CURRENT IF (A) 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 FORWARD VOLTAGE VF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10 2 7 5 3 2 10 2 Tj=25C Tj=125C 1.6 Irr (A), Qrr (c) 7 5 3 2 Zth (j-c) (C/W) 10 1 Irr 10 1 trr (s) 1.2 0.8 10 0 10 0 7 5 Qrr 3 trr VCC=300V 2 IB1=-IB2=0.6A -1 10 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 FORWARD CURRENT IF (A) TIME (s) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES (Diode part (D2)) MAXIMUM FORWARD CHARACTERISTIC TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 2.0 FORWARD CURRENT IF (A) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 Tj=25C Zth (j-c) (C/W) 1.6 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) 1.0 1.4 1.8 2.2 VF (V) FORWARD VOLTAGE MAXIMUM SURGE CURRENT IFSM (A) REVERSE RECOVERY CHARACTERISTICS (VS. IF) (TYPICAL) 1000 800 Irr (A), Qrr (C) SURGE FORWARD CURRENT 600 400 10 2 7 VR=300V 5 di/dt=-60A/s 3 Tj=25C 2 Tj=150C 10 1 Irr 7 5 3 2 10 0 7 5 3 2 Qrr 10 2 10 1 trr (s) 10 0 200 trr 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 -1 10 -1 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) REVERSE RECOVERY CHARACTERISTICS (VS. di/dt) (TYPICAL) Irr (A), Qrr (C) 10 2 7 VR=300V 5 IF=30A 3 Tj=25C 2 Tj=150C 10 1 7 5 3 2 10 0 7 5 3 2 10 2 Irr 10 1 Qrr trr (s) 10 0 trr 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 di/dt (A/s) Feb.1999 |
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